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| S9B-PH-SM3-TB资料 | |
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S9B-PH-SM3-TB PDF Download |
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File Size : 116 KB
Manufacturer:JST Description:1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 25 mA. (In general, when RG (off) = 68Ω, it is satisfied.) 3. The ground of the drive signal must be connected to pin 7 only. If the emitter terminal pins 5 and 6 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured 5,000 shots under the charge current (IXe 150 A : full luminescence condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：S9B-PH-SM3-TB 厂 家：JST 封 装： 批 号：42 数 量：7000 说 明：绝对原装正品底价 |
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