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| S3F9454BZZ-DK94资料 | |
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S3F9454BZZ-DK94 PDF Download |
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File Size : 116 KB
Manufacturer:SAMSUNG Description:Notes: 3. CL = 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured 500 mV from steady-state voltage. 4. The internal write time of the memory is defined by the overlap of CS LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 5. Guaranteed, not tested. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：S3F9454BZZ-DK94 厂 家：SAMSUNG 封 装：DIP 批 号：08+ 数 量：3700 说 明：绝对原装正品底价 |
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运 费： 所在地： 新旧程度： |
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