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MNBC67GAJUC

MNBC67GAJUC资料
MNBC67GAJUC
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File Size : 116 KB
Manufacturer:PAN
Description:  This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drainCtoCsource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
 
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型 号:MNBC67GAJUC
厂 家:PAN
封 装:QFP
批 号:0448+
数 量:436
说 明:绝对原装深圳现货/底价
 
 
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