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| EC2648-B3-F资料 | |
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EC2648-B3-F PDF Download |
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File Size : 116 KB
Manufacturer:E-CMOS Description:a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con- servation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. d) Current rating of brake part increased. 67% for the current rating of inverter part. • 3 75A, 600V Current-sense IGBT type inverter • 50A, 600V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 5.5kW/7.5kW class inverter application |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：EC2648-B3-F 厂 家：E-CMOS 封 装：SOT-23 批 号：04+ 数 量：5,729 说 明：绝对原装正品底价 |
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运 费： 所在地： 新旧程度： |
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