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| BZT52C15S-7-F资料 | |
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BZT52C15S-7-F PDF Download |
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File Size : 116 KB
Manufacturer:DIODES Description:The K9K1208U0A is a 528Mbit(553,648,218 bit) memory organized as 131,072 rows(pages) by 528 columns. Spare sixteen col- umns are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 32 pages formed by two NAND structures, totaling 8,448 NAND structures of 16 cells. The array organization is shown in Figure 2. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The mem- ory array consists of 4,096 separately erasable 16K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9K1208U0A. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：BZT52C15S-7-F 厂 家：DIODES 封 装：SOD-323 批 号：04-06 数 量：5,967 说 明：绝对原装正品底价 |
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