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| B5B-EH-A资料 | |
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B5B-EH-A PDF Download |
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File Size : 116 KB
Manufacturer:JST Description:The SRAM will meet all stated functional and electrical specifications over the entire operating temperature range after the specified total ionizing radiation dose. All electrical and timing performance parameters will remain within specifications after rebound at VDD = 5.5 V and T =125C extrapolated to ten years of operation. Total dose hardness is assured by wafer level testing of process monitor transis- tors and RAM product using 10 keV X-ray and Co60 radiation sources. Transistor gate threshold shift correla- tions have been made between 10 keV X-rays applied at a dose rate of 1x105 rad(SiO2)/min at T = 25C and gamma rays (Cobalt 60 source) to ensure that wafer level X-ray testing is consistent with standard military radiation test environments. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：B5B-EH-A 厂 家：JST 封 装： 批 号：44 数 量：151819 说 明：绝对原装正品底价 |
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运 费： 所在地： 新旧程度： |
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| 联系人：龙先生,胡小姐 |
| 电 话：0755-83226907,83229025,83226903 |
| 手 机：13927436669 |
| QQ：1109170345,514620629 |
| MSN：hlh1999@msn.com |
| 传 真：0755-83226930 |
| EMail：sale@cdf-ic.com |
| 公司地址： 深圳市福田区中航路新亚洲电子商城国利大厦710室. |
